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MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial an d industrial applications with frequencies up to 1000 mhz. the hi gh gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. ? typical single - carrier n - cdma performance @ 880 mhz, v dd = 28 volts, i dq = 450 ma, p out = 14 watts avg., is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 21.4 db drain efficiency ? 32.1% acpr @ 750 khz offset ? - 47.6 dbc @ 30 khz bandwidth gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 500 ma, p out = 21 watts avg., full frequency band (921 - 960 mhz) power gain ? 20 db drain efficiency ? 46% spectral regrowth @ 400 khz offset = - 62 dbc spectral regrowth @ 600 khz offset = - 78 dbc evm ? 1.5% rms gsm application ? typical gsm performance: v dd = 28 volts, i dq = 500 ma, p out = 60 watts, full frequency band (921 - 960 mhz) power gain ? 20 db drain efficiency ? 63% ? capable of handling 10:1 vswr, @ 28 vdc, 880 mhz, 60 watts cw output power ? characterized with series equivalent large - signal impedance parameters ? integrated esd protection ? n suffix indicates lead - free terminations ? 200 c capable plastic package ? to - 270 - 2 in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. ? to - 272 - 2 in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, + 12 vdc total device dissipation @ t c = 25 c derate above 25 c p d 227 1.3 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: mrf6s9060 rev. 1, 6/2005 freescale semiconductor technical data 880 mhz, 14 w avg., 28 v single n - cdma lateral n - channel broadband rf power mosfets MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 case 1265 - 08, style 1 to - 270 - 2 plastic MRF6S9060NR1(mr1) case 1337 - 03, style 1 to - 272 - 2 plastic mrf6s9060nbr1(mbr1) ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 60 w cw case temperature 80 c, 14 w cw r jc 0.77 0.88 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1a (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 a) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds = 28 vdc, i d = 450 madc) v gs(q) ? 2.9 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 1.5 adc) v ds(on) ? 0.18 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 4.2 ? s dynamic characteristics input capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 106 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 33 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.4 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 450 ma, p out = 14 w avg., f = 880 mhz, single - carrier n - cdma, 1.2288 mhz channel bandwidth carrier. acpr measured in 30 khz channel bandwidth @ 750 khz offset. par = 9.8 db @ 0.01% probability on ccdf power gain g ps 20.5 21.4 23.5 db drain efficiency d 30.5 32.1 ? % adjacent channel power ratio acpr ? - 47.6 -45 dbc input return loss irl ? - 15.3 -9 db 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955.
MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical gsm edge performances (in freescale gsm edge test fixture optimized for 921 - 960 mhz, 50 hm system) v dd = 28 vdc, i dq = 500 ma, p out = 21 w avg., f = 921 - 960 mhz, gsm edge signal power gain g ps ? 20 ? db drain efficiency d ? 46 ? % error vector magnitude evm ? 1.5 ? % spectral regrowth at 400 khz offset sr1 ? -62 ? dbc spectral regrowth at 600 khz offset sr2 ? -78 ? dbc typical cw performances (in freescale gsm test fixture optimized for 921 - 960 mhz, 50 hm system) v dd = 28 vdc, i dq = 500 ma, p out = 60 w, f = 921 - 960 mhz power gain g ps ? 20 ? db drain efficiency d ? 63 ? % input return loss irl ? -12 ? db p out @ 1 db compression point (f = 940 mhz) p1db ? 67 ? w
4 rf device data freescale semiconductor MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 figure 1. MRF6S9060NR1(nbr1)/mr1(mbr1) test circuit schematic z9 0.057 x 0.525 microstrip z10 0.360 x 0.270 microstrip z11 0.063 x 0.270 microstrip z12 0.360 x 0.065 microstrip z13 0.170 x 0.065 microstrip z14 0.880 x 0.065 microstrip z15 0.260 x 0.065 microstrip pcb taconic rf - 35 0.030 , r = 3.5 z1 0.215 x 0.065 microstrip z2 0.221 x 0.065 microstrip z3 0.500 x 0.100 microstrip z4 0.460 x 0.270 microstrip z5 0.040 x 0.270 microstrip z6 0.280 x 0.270 x 0.530 taper z7 0.087 x 0.525 microstrip z8 0.435 x 0.525 microstrip r2 v bias v supply rf output rf input dut c3 l1 z1 c2 z2 z3 c1 z4 z5 z6 z7 c4 z8 c5 z9 z10 c14 c13 b1 r3 r1 l2 b2 c9 c8 c6 c10 c11 c15 c16 c17 c18 r4 c19 c7 z11 z12 z13 z14 c12 z15 + + + + + table 6. MRF6S9060NR1(nbr1)/mr1(mbr1) test circuit component designations and values part description part number manufacturer b1 ferrite bead 95f786 newark b2 ferrite bead 95f787 newark c1, c8, c14, c15 47 pf chip capacitors 100b470jp500x newark c2, c4, c13 0.8 - 8.0 pf variable capacitors, gigatrim 44f3360 newark c3 3.0 pf chip capacitor 100b3r0jp500x newark c5, c6 15 pf chip capacitors 100b150jp500x newark c7, c16, c17 10 f, 35 v tantalum capacitors 93f2975 newark c9 100 f, 50 v electrolytic capacitor 51f2913 newark c10, c11 13 pf chip capacitors 100b130jp500x newark c12 3.9 pf chip capacitor 100b3r9jp500x newark c18 0.56 f chip capacitor 700a561mp150x newark c19 470 f, 63 v electrolytic capacitor 95f4579 newark l1, l2 12.5 nh inductor a04t - 5 coilcraft r1 1 k ? chip resistor 05f1545 newark r2 560 k ? chip resistor 84n2435 newark r3 12 ? chip resistor 97c9103 newark r4 27 chip resistor 04h7058 newark
MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 5 rf device data freescale semiconductor figure 2. MRF6S9060NR1(nbr1)/mr1(mbr1) test circuit component layout cut out area c7 b1 r1 c9 r2 r3 c8 l1 c6 c5 c3 c2 c4 c10 c11 l2 c12 c13 c14 c18 r4 c16 c17 c19 b2 c15 c1 to?270/272 surface / bolt down v gg v dd
6 rf device data freescale semiconductor MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 typical characteristics g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) ?24 ?20 920 840 irl g ps acpr f, frequency (mhz) figure 3. single - carrier n - cdma broadband performance @ p out = 14 watts avg. 900 890 880 870 860 850 20.6 22 21.8 ?65 40 35 30 ?50 ?55 ?60 d , drain efficiency (%) d 21.6 21.4 21.2 21 20.8 ?45 910 alt1 ?16 ?12 ?8 v dd = 28 vdc, p out = 14 w (avg.), i dq = 450 ma n?cdma is?95 pilot, sync, paging, traffic codes 8 through 13 g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) ?20 ?16 920 840 irl g ps acpr f, frequency (mhz) figure 4. single - carrier n - cdma broadband performance @ p out = 28 watts avg. 900 890 880 870 860 850 20 21.6 21.4 ?64 50 48 46 ?40 ?48 ?56 d , drain efficiency (%) d 21.2 21 20.8 20.6 20.4 ?32 910 alt1 ?12 ?8 ?4 v dd = 28 vdc, p out = 28 w (avg.), i dq = 450 ma n?cdma is?95 pilot, sync, paging, traffic codes 8 through 13 figure 5. two - tone power gain versus output power 100 17 23 i dq = 675 ma p out , output power (watts) pep 21 19 10 g ps , power gain (db) 22 20 550 ma 450 ma 1 300 v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements, 100 khz tone spacing figure 6. third order intermodulation distortion versus output power ?30 ?10 1 p out , output power (watts) pep 10 ?20 100 ?60 ?40 intermodulation distortion (dbc) imd, third order i dq = 225 ma 350 ma ?50 20.2 44 18 350 ma 225 ma v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements, 100 khz tone spacing 450 ma 550 ma 675 ma
MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power 10 ?80 ?10 7th order p out , output power (watts) pep v dd = 28 vdc, i dq = 450 ma, f1 = 880 mhz f2 = 880.1 mhz, two ?tone measurements center frequency = 880 mhz 5th order 3rd order ?20 ?30 ?40 1 300 imd, intermodulation distortion (dbc) ?50 ?60 ?70 100 figure 8. intermodulation distortion products versus tone spacing 10 ?70 0 0.05 7th order two ?tone spacing (mhz) v dd = 28 vdc, p out = 60 w (pep) i dq = 450 ma, two ?tone measurements center frequency = 880 mhz 5th order ?10 ?20 ?30 ?40 ?50 ?60 1 300 imd, intermodulation distortion (dbc) figure 9. pulse cw output power versus input power 34 56 23 p3db = 50 dbm (150 w) p in , input power (dbm) v dd = 28 vdc, i dq = 450 ma pulsed cw, 8 sec(on), 1 msec(off) center frequency = 880 mhz 54 52 50 48 44 24 26 25 28 27 31 29 actual ideal p1db = 49.1 dbm (100 w) 55 53 49 51 47 30 32 33 22 p out , output power (dbm) figure 10. single - carrier n - cdma acpr, alt1, power gain and drain efficiency versus output power ?5 ?85 p out , output power (watts) avg. 55 ?25 45 ?35 35 ?45 25 ?55 5 ?75 110 ?65 15 alt1 d g ps t c = 25 c 85 c acpr d , drain efficiency (%), g ps , power gain (db) v dd = 28 vdc, i dq = 450 ma f = 880 mhz, n?cdma is?95 pilot, sync, paging, traffic codes 8 through 13 alt1, channel power (dbc) acpr, adjacent channel power ratio (dbc) 0.1 100 3rd order 46 45 ?30 c 25 c 25 c ?30 c 25 c 85 c
8 rf device data freescale semiconductor MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 typical characteristics 100 22 1 0 80 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 450 ma f = 880 mhz t c = ?30 c ?30 c 85 c 10 21.5 21 20 19 70 60 50 40 30 20 d , drain efficiency (%) g ps d g ps , power gain (db) figure 12. power gain versus output power p out , output power (watts) cw v dd = 12 v 16 v g ps , power gain (db) 140 10 22 080 20 21 17 16 15 14 13 40 60 19 18 20 i dq = 450 ma f = 880 mhz 20.5 19.5 18.5 18 10 25 c 25 c 85 c 10 12 11 30 50 70 90 100 110 120 130 20 v 24 v 28 v 32 v 210 10 9 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 7 10 6 mttf factor (hours x amps 2 ) 90 110 130 150 170 190 figure 13. mttf factor versus junction temperature 100 120 140 160 180 200
MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 9 rf device data freescale semiconductor n - cdma test signal 10 0.0001 100 0 peak ?to?average (db) figure 14. single - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 750 khz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 +acpr @ 30 khz integrated bw 1.2288 mhz channel bw 2.9 0.7 2.2 1.5 0 ?0.7 ?1.5 ?2.2 ?2.9 ?3.6 3.6 f, frequency (mhz) figure 15. single - carrier n - cdma spectrum ?acpr @ 30 khz integrated bw
10 rf device data freescale semiconductor MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 figure 16. series equivalent source and load impedance f mhz z source ? z load ? 850 865 880 2.28 + j0.23 2.20 + j0.47 2.18 + j0.33 0.44 - j0.20 0.44 - j0.07 0.45 + j0.50 v dd = 28 vdc, i dq = 450 ma, p out = 14 w avg. 895 910 2.00 + j0.68 2.15 + j0.61 0.48 + j0.18 0.52 + j0.29 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z o = 5 ? f = 850 mhz f = 910 mhz z source f = 850 mhz f = 910 mhz z load
MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 11 rf device data freescale semiconductor notes
12 rf device data freescale semiconductor MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 notes
MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 13 rf device data freescale semiconductor notes
14 rf device data freescale semiconductor MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 package dimensions to - 270- 2 plastic case 1265 - 08 issue h datum plane bottom view a1 2x e d1 e4 e1 d2 e3 a2 exposed heatsink area a b d h pin one id ???? ???? ???? ???? ???? ???? ???? ???? ???? a m aaa d a m aaa d 2x b1 2x d3 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d1" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d1" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension b1 does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the b1 dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone ? j" only. 8. dimensions ? d" and ? e2" do not include mold protrusion. allowable protrusion is .003 per side. dimensions ? d" and ? e2" do include mold mismatch and are deter? mined at datum plane ?d?. note 7 c1 f zone j e2 2x a dim a min max min max millimeters .078 .082 1.98 2.08 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .416 .424 10.57 10.77 d1 .378 .382 9.60 9.70 d2 .290 .320 7.37 8.13 d3 .016 .024 0.41 0.61 e .436 .444 11.07 11.28 e1 .238 .242 6.04 6.15 e2 .066 .074 1.68 1.88 e3 .150 .180 3.81 4.57 e4 .058 .066 1.47 1.68 f b1 .193 .199 4.90 5.06 c1 .007 .011 0.18 0.28 aaa .025 bsc .004 0.64 bsc 0.10 pin 1 pin 2 pin 3 style 1: pin 1. drain 2. gate 3. source e5 e5 e5 .231 .235 5.87 5.97 MRF6S9060NR1(mr1)
MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 15 rf device data freescale semiconductor case 1337 - 03 issue c notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. datum plane ?h? is located at the top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions "d" and "e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions "d" and "e1" do include mold mismatch and are determined at datum plane ?h?. 5. dimension "b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the "b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone "j" only. 8. crosshatching represents the exposed area of the heat slug. h c a b seating plane datum plane 2x b1 a e1 r1 drain lead d d1 e note 8 y y dim a min max min max millimeters .100 .104 2.54 2.64 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .928 .932 23.57 23.67 d1 e .438 .442 11.12 11.23 e1 .248 .252 6.30 6.40 f b1 .193 c1 .007 .011 .18 r1 .063 .068 1.60 aaa 1 view y - y .810 bsc .004 20.57 bsc .10 style 1: pin 1. drain 2. gate 3. source .025 bsc .28 1.73 pin 3 a1 a2 f zone "j" 7 b aaa m ca aaa m ca 2x .199 4.90 0.64 bsc 5.05 c1 2 drain id gate lead e2 e2 e2 .241 .245 6.12 6.22 to - 272- 2 plastic mrf6s9060nbr1(mbr1)
16 rf device data freescale semiconductor MRF6S9060NR1 mrf6s9060nbr1 mrf6s9060mr1 mrf6s9060mbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s9060 rev. 1, 6/2005

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